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The Bourns® IGBT discrete BID series combines technology from a MOS gate and a bipolar transistor, creating the right component for high voltage and high current applications. This device uses advanced Trench-Gate Field-Stop technology providing greater control of the dynamic characteristics while resulting in a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure increases the robustness of the device and gives a lower RTH. The Bourns® IGBT solution is suitable for SMPS, UPS and PFC applications.
Conflict Mineral Source Reporting for Insulated Gate Bipolar Transistors (IGBTs): CMRT
>> IGBT Technical Library
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