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Bourns® Silicon Carbide (SiC) Schottky Barrier Diodes

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Bourns® Kaschke Magnetic Components

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Bourns® Model SD & AD Series

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Bourns® Model GDT35 Series

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High-efficiency Discrete IGBTs for Industrial Power Applications

Insulated Gate Bipolar Transistors (IGBTs):

  • Discrete IGBTs co-packed with FRD
  • Advanced Trench-Gate Field-Stop (TGFS) technology
  • Low saturation voltage drop (Vce(sat))
  • Low switching loss
  • TO-252, TO-247 and TO-247N packages
High-efficiency Discrete IGBTs for Industrial Power Applications

Bourns® POWrFuse™ High-Power Fuses

Bourns® POWrFuse™ High-Power Fuses:

  • Five application-specific families
  • Up to 1000 VDC and 400 A
  • Up to 160 kA interrupting current
  • UL248, IEC 60269-6 and ISO 8820-8 compliance
Data Sheet PTVS1
Data Sheet PTVS2

Increase BMS Life & Safety with Bourns Solutions

Bourns high-quality components are designed to meet BMS requirements for:

  • Isolated communications
  • High voltage support
  • Effective protection
  • Wide temperature range
  • Accurate current sensing
Increase BMS Life & Safety with Bourns Solutions
 
 

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Model SRN-BTA Series
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