Insulated Gate Bipolar Transistors (IGBTs)

Specifications

The Bourns® IGBT discrete BID series combines technology from a MOS gate and a bipolar transistor, creating the right component for high voltage and high current applications. This device uses advanced Trench-Gate Field-Stop technology providing greater control of the dynamic characteristics while resulting in a lower Collector-Emitter Saturation Voltage (V_CE(sat)) and fewer switching losses. In addition, this structure increases the robustness of the device and gives a lower R_TH. The Bourns® IGBT solution is suitable for SMPS, UPS and PFC applications.

Conflict Mineral Source Reporting for Insulated Gate Bipolar Transistors (IGBTs): CMRT

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Specifications

Series	BIDW20N60T
Data Sheet
Photo
Package	TO-247
Feature	Medium speed
V_CE [V]	600
I_C @ T=100 ˚C [A]	20
Typ. V_CE(sat) @ Ic, Vge=15 V [V]	1.7
I_F @ T=100 ˚C [A]	20
Operating Junction Temperature	–55 °C to +150 °C
MDS	BIDW20N60T
Design Files	Downloads
Engineering
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Model/Datasheet	Photo	MSL	Soldering Profiles	Packaging Label	Terminal	CofC	3rd Party Test Reports	MDS	China RoHS

File	Type	Size	Uploaded on	Download
Protecting High Speed Communication Ports	PDF	843.57 KB	28 May, 2015	Download

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