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product detail
BSDH06G65E2
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Diodes
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Silicon Carbide (SiC) Schottky Barrier Diodes
DATA SHEET
MDS
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Specifications
Package
TO220-2
I
F(AV)
Max.
(A)
6
I
o(AV)
Max.
(A)
--
T
j
Max.
(°C)
175
V
RRM
Max.
(V)
650
Q
r
Typ.
(nC)
9
V
F
@ T
j
= 25 °C,
I
F(av)
(V)
1.45
Design Files
Downloads