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Insulated Gate Bipolar Transistors (IGBTs)

Specifications

The Bourns® IGBT discrete BID series combines technology from a MOS gate and a bipolar transistor, creating the right component for high voltage and high current applications. This device uses advanced Trench-Gate Field-Stop technology providing greater control of the dynamic characteristics while resulting in a lower Collector-Emitter Saturation Voltage (V_CE(sat)) and fewer switching losses. In addition, this structure increases the robustness of the device and gives a lower R_TH. The Bourns® IGBT solution is suitable for SMPS, UPS and PFC applications.

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Series	Package	Feature	V_CE [V]	I_C @ T=100 ˚C [A]	Typ. V_CE(sat) @ Ic, Vge=15 V [V]	I_F @ T=100 ˚C [A]	Operating Junction Temperature	MDS	Design Files	Buy Now
BIDD05N60T	TO-252	Medium speed	600	5	1.5	N/A	–55 °C to +150 °C	BIDD05N60T	Downloads	Buy
BIDW20N60T	TO-247	Medium speed	600	20	1.7	20	–55 °C to +150 °C	BIDW20N60T	Downloads	Buy
BIDW30N60T	TO-247	Medium speed	600	30	1.65	30	–55 °C to +150 °C	BIDW30N60T	Downloads	Buy
BIDW50N65T	TO-247	Medium speed	650	50	1.65	50	–55 °C to +150 °C	BIDW50N65T	Downloads	Buy
BIDNW30N60H3	TO-247N	High speed	600	30	1.65	12	–55 °C to +150 °C	BIDNW30N60H3	Downloads	Buy
BIDW40N65H5	TO-247	High speed	650	40	1.65	20	–40 °C to +175 °C	TBD	Downloads	Buy
BIDW40N65ES5	TO-247	Efficient Medium Speed	650	40	1.35	40	–40 °C to +175 °C	TBD	Downloads	Buy
BIDW75N65EH5	TO-247	Efficient High Speed	650	75	1.65	75	–40 °C to +175 °C	TBD	Downloads	Buy
BIDW75N65ES5	TO-247	Efficient Medium Speed	650	75	1.42	75	–40 °C to +175 °C	TBD	Downloads	Buy