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BSDH10G65E2

Diode (Line) Capacitance – Cd (pF)	min 0.18	max 500
Working Reverse Voltage - V_RWM (V)	min 2.5	max 70
Clamp Voltage (V)	min 1.5	max 100
Max Pulse Current @8/20μs - IPP(A)	min 1.2	max 95
Max Pulse Current @8/20μs - IPP(A)	Not Specified Check the "Not Specified" box to include products that do not have this particular parameter specified.

Number of Protected Lines
Function
Package
Bi/Uni Directional
AEC-Q101 Compliance

Model/Datasheet	Soldering Profiles	Packaging Label	Terminal	CofC	3rd Party Test Reports	MDS	China RoHS
BSDH10G65E2	SiC Diode Wave Soldering	TBD	e3	CD 1	Request Report	BSDH10G65E2	TBD
BSDD06G65E2	SiC Diode Reflow Soldering	TBD	e3	CD 1	Request Report	BSDD06G65E2	TBD
BSDL10S65E6	SiC Diode Reflow Soldering	TBD	e3	CD 1	Request Report	BSDL10S65E6	TBD
BSDW20S65C6	SiC Diode Wave Soldering	TBD	e3	CD 1	Request Report	BSDW20S65C6	TBD
BSDW20G120C2	SiC Diode Wave Soldering	TBD	e3	CD 1	Request Report	BSDW20G120C2	TBD
BSDH10G120E2	SiC Diode Wave Soldering	TBD	e3	CD 1	Request Report	BSDH10G120E2	TBD
BSDD05G120E2	SiC Diode Reflow Soldering	TBD	e3	CD 1	Request Report	BSDD05G120E2	TBD
BSDV10G120E2	SiC Diode Wave Soldering	TBD	e3	CD 1	Request Report	BSDV10G120E2	TBD
BSDH06G65E2	SiC Diode Wave Soldering	TBD	e3	CD 1	Request Report	BSDH06G65E2	TBD
BSDH08G65E2	SiC Diode Wave Soldering	TBD	e3	CD 1	Request Report	BSDH08G65E2	TBD
BSDD08G65E2	SiC Diode Reflow Soldering	TBD	e3	CD 1	Request Report	BSDD08G65E2	TBD
BSDD10G65E2	SiC Diode Reflow Soldering	TBD	e3	CD 1	Request Report	BSDD10G65E2	TBD
BSDW20G65C2	SiC Diode Wave Soldering	TBD	e3	CD 1	Request Report	BSDW20G65C2	TBD
BSDH10S65E6	SiC Diode Wave Soldering	TBD	e3	CD 1	Request Report	BSDH10S65E6	TBD
BSDB10S65E6	SiC Diode Reflow Soldering	TBD	e3	CD 1	Request Report	BSDB10S65E6	TBD
BSDD10S65E6	SiC Diode Reflow Soldering	TBD	e3	CD 1	Request Report	BSDD10S65E6	TBD

File	Type	Size	Uploaded on	Download
Protecting High Speed Communication Ports	PDF	843.57 KB	28 May, 2015	Download

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Series	BSDH10G65E2
Data Sheet
Photo
Package	TO220-2
I_F(AV) Max. (A)	10
I_o(AV) Max. (A)	--
T_j Max. (°C)	175
V_RRM Max. (V)	650
Q_r Typ. (nC)	14.5
V_F @ T_j = 25 °C, I_F(av) (V)	1.45
RoHS Compliant	BSDH10G65E2
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