Insulated Gate Bipolar Transistors (IGBTs)

Spezifikationen

The Bourns® IGBT discrete BID series combines technology from a MOS gate and a bipolar transistor, creating the right component for high voltage and high current applications. This device uses advanced Trench-Gate Field-Stop technology providing greater control of the dynamic characteristics while resulting in a lower Collector-Emitter Saturation Voltage (V_CE(sat)) and fewer switching losses. In addition, this structure increases the robustness of the device and gives a lower R_TH. The Bourns® IGBT solution is suitable for SMPS, UPS and PFC applications.

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Model/Datasheet	Bild	MSL	Lötprofile	Verpackungsetikett	Anschluss	Konf.	Prüfberichte Dritter	MDB	China RoHS

File	Type	Size	Uploaded on	Download
Schutz für Hochgeschwindigkeits-Kommunikationsanschlüsse	PDF	843,57 KB	28 Mai, 2015	Download

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