高電壓型:三電極(High Voltage, 3-Electrode)

高電壓GDT專為「高隔離度」的應用與客戶需求而設計。其直流崩潰電壓範圍從800V至1100 V。

GDT, SPD, MOV的衝突礦產來源報告: CFSI_CMRT4-01

Series 2052-xx-SM
資料表 2052-xx-SM
描述 Light Duty Symmetrical 3-Electrode Miniature GDT
產品圖片 2052_part
裝置符號 gdt_3_electrode
體積 5 x 7.2
電容pF <2
DC Breakdown Voltage Range V 800
Nominal 8/20µs Impulse Discharge Current (kA) 10 5
Max 8x20µs Impulse Current (kA) 1 Application 10
Max 10x350µs Impulse Current (kA) 1 Application Not Rated
Operating Temperature Range C° -30 to +85
Packaging Options Tape & Reel, Bulk
RoHS 規範 2052-xx-SMLF
相關文件 2052-xx-SMLF
工程文件 Downloads
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